个人简历
2020年06月：毕业于西安电子科技大学微电子学院集成电路设计与集成系统专业，获学士学位；
2025年06月：毕业于西安电子科技大学集成电路学部集成电路科学与工程专业，获工学博士学位；
2023.10~2025.01：中国科学院微电子所先导中心（八寸集成电路制造产线）联培。
2025年7月至今：南开大学电子信息与光学工程学院微纳电子学系，讲师。
讲授课程
本科生课程：线性代数，认知实习课程——半导体器件设计与仿真实战
科研项目
参与国家杰青项目新型微纳米CMOS器件
参与国家重点研发计划高迁移率CMOS与中红外光子器件及混合集成技术研究
参与国家自然科学基金超薄ZrO2栅介质NC-FinFET及其可靠性研究
参与浙江省自然科学基金重大项目（创新群体）课题—多栅2D-FeFET存算一体器件研究
论文/专著/教材
论文
[1] Yueyuan Zhang, Yue Peng, Fenning Liu, Kaixuan Li, Ni Zhong, Yan Liu, Yue Hao, and Genquan Han. Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO2 Capacitors[J]. IEEE Transactions on Electron Devices, 2023, 70(7): 3788-3793.
[2] Fenning Liu, Yueyuan Zhang, Yue Peng, GenQuan Han, Yan Liu, and Yue Hao, Impact of Multi-domain Effect On the Effective Carrier Mobility of Ferroelectric Field-effect Transistor[J]. Nanotechnology, 2023, 35 095706.
[3] Yueyuan Zhang, Yue Peng, Fenning Liu, Yan Liu, Yue Hao, and Genquan Han. Performance Improvement of HfZrOx Ferroelectric Tunnel Junction with Amorphous Al2O3 Passivation Layer [C]. 55th International Conference on Solid State Devices and Materials (SSDM), Japan, Sep. 5 - 8, 2023.
[4] Yueyuan Zhang, Zhaohao Zhang, Fan Zhang, Kun Zhong, Yan Liu, Huaxiang Yin, and Genquan Han, Enhanced Gate Length Scalability of Ferroelectric FinFET Non volatile Memory Utilizing HfO2-ZrO2 Superlattice Gate Stacks [J], IEEE Electron Device Letters.
[5] Yueyuan Zhang, Fan Zhang, Zhaohao Zhang, Kun Zhong, Yan Liu, Huaxiang Yin, Yue Hao, and Genquan Han, Impact of Stress Strategy on NC effect in Ultrathin HfO2-ZrO2 Superlattice Gate Stacks with Scaled EOT [J], IEEE Electron Device Letters.
[6] Peng, Yue, Wenwu Xiao, Yan Liu, Chengji Jin, Xinran Deng, Yueyuan Zhang, Fenning Liu, Yunzhe Zheng, Yan Cheng, Bing Chen, Xiao Yu, Yue Hao, and Genquan Han. HfO2-ZrO2 Superlattice Ferroelectric Capacitor with Improved Endurance Performance and Higher Fatigue Recovery Capability[J]. IEEE Electron Device Letters, 2022, 43(2): 216-219.
[7] Peng, Yue, Wenwu Xiao, Fenning Liu, Chengji Jin, Yan Cheng, Luhua Wang, Yueyuan Zhang, Xiao Yu, Yan Liu, Yue Hao, and Genquan Han. HfO2 –ZrO2 Superlattice Ferroelectric Field-Effect Transistor with Improved Endurance and Fatigue Recovery Performance[J]. IEEE Transactions on Electron Devices, 2023, 70(7):3979–82.
[8] Li, Kaixuan, Yue Peng, Wenwu Xiao, Fenning Liu, Yueyuan Zhang, Ze Feng, Hong Dong, Yan Liu, Yue Hao, and Genquan Han. A Comparative Study on the Polarization, Reliability, and Switching Dynamics of HfO2 -ZrO2 -HfO2 and ZrO2 HfO2 -ZrO2 Superlattice Ferroelectric Films[J]. IEEE Transactions on Electron Devices, 2023, 70(4):1802–7.
[9] Kang, Mingshuang, Yue Peng, Wenwu Xiao, Yueyuan Zhang, Zhe Wang, Peiyuan Du, Hao Jiang, Fenning Liu, Yan Liu, Yue Hao, and Genquan Han. HfO2 –ZrO2 Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed[J]. ACS Applied Materials & Interfaces, 2024, 16(2):2954–63.
